Sulphide based anode material for lithium rechargeable battery

In this study, lead sulphide (PbS) was prepared by the chemical bath deposition technique. The sample was characterized by X-ray diffraction (XRD), Energy Dispersive Analysis of X-rays (EDAX) and cyclic voltammetry. EDAX spectrum shows peaks attributable to lead and sulphur. The EDAX analysis also shows that the prepared sample is stoichiometric. Cyclic voltammetry experiments were recorded at 100 mV·s⁻¹ and 400 mV·s⁻¹ scan rates. Results show that the rate controlling electrochemical reaction is electron transfer. The presence of redox waves shows that the lithium intercalation and deintercalation can occur as a result of lattice expansion in PbS. There were no differences in the PbS XRD data before and after the cyclic voltammetry experiments indicating that the PbS structure is not modified upon lithium ion intercalation and deintercalation in PbS. The discharge characteristics for 35 cycles of the cell using the LiCoO₂/PbS couple is presented indicating the possible development of such materials as anode in lithium ion cells.     

A stable dual-wavelength fiber laser with tunable wavelength spacing using a polarization-maintaining linear cavity

We propose and experimentally demonstrate a stable dual-wavelength erbium-doped polarization-maintaining (PM) fiber laser with tunable wavelength spacing using an all-PM linear cavity that makes use of two reflection peaks from the PM fiber Bragg grating (PM-FBG). Experimental results show stable dual lasing lines with a wavelength separation of ∼0.22 nm and a large optical signal-to-noise ratio (OSNR) of over 40 dB under room temperature. By applying axial strain to the PM-FBG, the center wavelengths of the two lasing lines can be tuned over several nanometers and the wavelength separation between the lasing lines can also be tuned to as small as 0.05 nm, which, to our knowledge, is the smallest wavelength spacing ever obtained from a stable room-temperature dual-wavelength fiber laser. The proposed laser configuration has the advantages of simple structure, low loss, stable dual-wavelength operation and a very small lasing linewidth of ∼5 kHz . PACS 42.55.Wd; 42.81.-i; 42.81.Gs     

Results from GRACE/SUSY at one-loop

We report the recent development on the SUSY calculations with the help of GRACE system. GRACE/SUSY/1LOOP is the computer code which can generate Feynman diagrams in the MSSM automatically and compute one-loop amplitudes in the numerical way. We present new results of various two-body decay widths and chargino pair production at ILC (international linear collider) at one-loop level.      

A fast method to measure the thickness of removed layer from etching of SSNTD based on EDXRF

Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.     

2,9-disubstituted 1,10-phenanthroline nickel complexes: Syntheses,characterization, and their ethylene oligomerization

Nickel complexes 1–4 ligated with 2,9-disubstituted-1,10-phenanthroline were synthesized and characterized by FT-IR spectra and elemental analysis. The molecular structure of complex 2 was confirmed by X-ray crystal diffraction analysis. Activated with methylaluminoxane (MAO), those complexes showed moderate activities for ethylene oligomerization. Published in Kinetika i Kataliz, 2007, Vol. 48, No. 5, pp. 710–714. This article was submitted by the authors in English.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Multi-layer thin films/substrate system subjected to non-uniform misfit strains

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such methodologies are further extended to multi-layer thin films deposited on a substrate in the present study. Each thin film may have its own non-uniform misfit strain. We derive relations between the stresses in each thin film and the change of system curvatures due to the deposition of each thin film. The interface shear stresses between the adjacent films and between the thin film and the substrate are also obtained from the system curvatures. This provides the basis for the experimental determination of thin film stresses in multi-layer thin films on a substrate.     

A generalized quasi-sum relations for oscillator strengths in transition arrays: theoretical study of the opacity of Ge plasmas

We present a simplified relativistic configuration interaction method (SRCI), by which all the energy levels and oscillator strengths in each transition array can be calculated. There exist generalized quasi-sum relations for the calculated oscillator strengths in the relevant transition arrays by the SRCI and by an unresolved transition array model (UTA). Based on UTA and the detailed configuration accounting (DCA), with a fully relativistic treatment incorporated with the quantum defect theory, the X-ray absorption spectra for any middle- and high-Z plasmas or composite plasmas can be calculated with much less computational efforts. The gross features of calculated spectra by DCA-UTA are in agreement with the relevant experimental measurements, except some detailed structures in some narrow spectral ranges. Such detailed structures can be calculated by SRCI incorporated with DCA-UTA. As an illustrative example, the absorption spectra of Ge plasmas are calculated by DCA-UTA-SRCI and are in agreement with the experimental opacity data. Therefore, the theoretical method (DCA-UTA-SRCI) verified by experimental measurements will not only be a basic tool to provide “precision” opacity data for the inertial confinement fusion research (ICF) and studies in stellar physics but also can be used to analyze the relevant diagnostic measurements for ICF plasmas.     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.